Plasma treatment at film layer to reduce sheet resistance and to improve via contact resistance

ABSTRACT

A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.

BACKGROUND

Semiconductor device geometries continue to dramatically decrease insize. For example, existing semiconductor devices routinely includefeatures having dimensions less than 90 nm. A challenge that has becomeever more difficult as this scaling continues has been improving thecontact and sheet resistance of the vias and interconnects employed tointerconnect the myriad logic devices formed in or on a substrate.

The fabrication of such a via, interconnect, or other contact caninclude forming an insulating layer over a substrate havingcomplementary metal-oxide-semiconductor (CMOS) devices or other logicdevice formed therein. Recesses or other openings are then etched orotherwise formed in the insulating layer to expose portions of the logicdevices. The openings in the insulating layer are then lined with afirst barrier layer which may comprise titanium, tantalum, or alloysthereof. The partially completed device may then be pre-heated inpreparation for the subsequent formation of a second barrier layer. Thesecond barrier layer typically comprises titanium, tantalum, nitride, oralloys thereof, such as may be formed bymetal-organic-chemical-vapor-deposition (MOCVD).

However, the conventional processes employed to form vias or othercontacts result in contacts that exhibit excessive sheet resistanceR_(s) and contact resistance R_(c). Excessive sheet resistance R_(s) canprevent adequate ohmic contact between vias and interconnects, andexcessive contact resistance R_(c) can increase power requirements anddecrease performance of devices incorporating the vias andinterconnects.

This problem has plagued semiconductor development for some time, to theextent that many solutions have been proposed. A typical approach hasbeen separately improving the quality of the first and second barrierlayers. However, those skilled in the art now recognize thatindividually improving the quality of the first and second barrierlayers cannot achieve the goal of reducing both sheet resistance R_(s)and contact resistance R_(c). Moreover, the proposed solutions typicallyhave a severe impact on throughput, often including multi-cycletreatments or depositions that undesirably consume precious process timeand render manufacturing more complex.

SUMMARY OF THE DISCLOSURE

The present disclosure relates to methods of manufacturing semiconductordevice contacts, the resulting structure, and integrated circuitsincluding the contacts. In one embodiment, a method of manufacturing asemiconductor device contact according to aspects of the presentdisclosure includes forming an insulating layer over a substrate andforming an agglutinating layer over the insulating layer. Theagglutinating layer may then be exposed to a plasma treatment. A barrierlayer may then be formed over the plasma-treated agglutinating layer,and a conductive layer may be formed over the barrier layer.

In another embodiment, the method includes providing a substrate havinglogic devices formed therein and forming an insulating layer over thesubstrate and logic devices. A plurality of recesses may be formed inthe insulating layer to expose portions of the logic devices. Anagglutinating layer may be formed over the insulating layer and at leastpartially within the plurality of recesses, and the agglutinating layermay be exposed to a plasma treatment. A barrier layer may be formed overthe plasma-treated agglutinating layer and at least partially within theplurality of recesses, and a bulk conductive layer may be formed overthe barrier layer to fill the plurality of recesses.

The present disclosure also provides a system for manufacturing asemiconductor device. In one embodiment, the system includes means forpositioning a substrate among a plurality of process chambers, means forforming an insulating layer over the substrate within one of theplurality of process chambers, and means for forming an agglutinatinglayer over the insulating layer within one of the plurality of processchambers. The system may also include means for plasma treating theagglutinating layer, means for forming a barrier layer over theplasma-treated agglutinating layer within one of the plurality ofprocess chambers, and means for forming a conductive layer over thebarrier layer within one of the plurality of process chambers.

The present disclosure also provides a semiconductor device that mayincorporate an embodiment of the semiconductor contact described above.In one embodiment, the semiconductor device includes a substrate and aplurality of logic devices located over the substrate. An insulatinglayer may be located over the logic devices, and may include a pluralityof recesses exposing underlying ones of the logic devices. Aplasma-treated agglutinating layer may be located over the insulatinglayer, including within the plurality of recesses. A barrier layer maybe located over the plasma-treated agglutinating layer, including withinthe plurality of recesses. The semiconductor device may also include aconductive layer located over the barrier layer and within the pluralityof recesses.

The foregoing has outlined features of various embodiments of thepresent disclosure so that those skilled in the art may betterunderstand the detailed description that follows. Those skilled in theart should appreciate that they can readily use the present disclosureas a basis for designing or modifying other structures for carrying outthe same purposes and/or achieving the same advantages of embodimentsdescribed herein. Those skilled in the art should also realize that suchequivalent constructions do not depart from the spirit and scope of thepresent disclosure.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isemphasized that, in accordance with the standard practice in theindustry, various features are not drawn to scale. In fact, thedimensions of the various features may be arbitrarily increased orreduced for clarity of discussion. Reference is now made to thefollowing descriptions taken in conjunction with the accompanyingdrawings.

FIG. 1 is a sectional view of at least a portion of one embodiment of asemiconductor device in an intermediate stage of manufacture accordingto aspects of the present disclosure.

FIG. 2 is a sectional view of the device shown in FIG. 1 in a subsequentstage of manufacture according to aspects of the present disclosure.

DETAILED DESCRIPTION

The first dielectric layer 120 is patterned to form a plurality ofcontacts, layer interconnects, or vias (hereinafter collectivelyreferred to as “vias”) 130. Such patterning may be achieved byconventional etching processes, including photolithographic processesemploying a photoresist mask having openings therein corresponding tothe vias 130.

The vias 130 may be lined with a first barrier layer 135, which maycomprise Ti, Ta, TiW, TiN, TaN, SiOC, SiC, and/or other materials. Inone embodiment, the first barrier layer 135 may be formed by depositingTi by ionized metal plasma (IMP) deposition and subsequently depositingTiN by metal-organic CVD (MOCVD). The first barrier layer 135 may alsobe deposited by atomic layer deposition (ALD), CVD, physical-vapordeposition (PVD), combinations thereof, and/or other processes.

The vias 130 are then filled to form conductive plugs 137, such as withtungsten, aluminum, copper, and/or other conductive materials. The plugs137 may be deposited by ALD, CVD, PVD, and/or other methods. In someembodiments, a seed layer may be deposited before the bulk materialforming the plugs is deposited, such as in embodiments in which theplugs 137 substantially comprise copper. After deposition, the plugs 137may be planarized, such as by a plasma or other etchback process, or bychemical-mechanical polishing (CMP).

The filled vias 130 and the first dielectric layer 120 are then coatedwith a second barrier layer 140. The second barrier layer 140 may bedeposited by ALD, CVD, PVD, and/or other methods, and may comprise Ti,Ta, TiW, TiN, TaN, SiOC, SiC, and/or other materials. A bulk metal layer150 is then deposited over the second barrier layer 140. The bulk metallayer 150 may comprise Al, Cu, and/or other materials, including thosetypically employed as interconnect conductors. The bulk metal layer 150may be deposited by ALD, CVD, PVD, sputtering, electroplating, and/orother methods.

A third barrier layer 160 may then be formed over the bulk metal layer150 by ALD, CVD, PVD, and/or other methods. The third barrier layer 160may comprise Ti, Ta, TiW, TiN, TaN, SiOC, SiC, and/or other materials.The third barrier layer 160 may be an anti-reflective coating (ARC),such as that which may be utilized in subsequent lithographicprocessing. As such, the third barrier layer 160 may be coated with ormay substantially comprise an ARC layer.

The second barrier layer 140, the bulk metal layer 150, and the thirdbarrier layer 160 may then be patterned to form conductive interconnects105. For example, a photoresist mask layer may be formed over the thirdbarrier layer 160 and an etch process may remove exposed portionsmaterials under the mask. The removal process may include a chemicaletch, a dry (plasma) etch, and/or other processes.

Thereafter, a second dielectric layer 170 is formed over and between theconductive interconnects 105. The second dielectric layer 170 maycomprise a low-k dielectric material, such as a porous or non-porousspin-on-glass. In one embodiment, the second dielectric layer 170comprises ELK, which is typically a porous SiO₂ film having pores filledwith an inert gas or air to provide the low-k dielectric properties,such as MesoELK™, a product of Schumacher of Carlsbad, Calif. The seconddielectric layer 170 may be then patterned to form second vias 180.

Thereafter, an agglutinating layer 190 may be formed over the seconddielectric layer 170 and within the second vias 180, as shown in FIG. 1.The agglutinating layer 190 may comprise Ti, Ta, TiW, TiN, TaN, SiOC,SiC, and/or other materials. The agglutinating layer 190 may prevent thediffusion of subsequently formed layers into the underlying dielectriclayer 170, and may also improve the adhesion of layers subsequentlyformed within the vias 180. Moreover, when employed in conjunction withaspects of the present disclosure, as discussed below, the agglutinatinglayer 190 may decrease the contact resistance Rc of the contacts 180being formed.

The agglutinating layer 190 may be formed by IMP deposition, wherein thepartially completed device 100 may be heated to a process temperatureranging between about 200° C. and about 500° C. Heating employed duringthe IMP deposition of the agglutinating layer 190 may provide improvedcontrol over grain size. For example, a lower process temperature mayprovide smaller grain size as compared to a higher process temperatures.The grain size of the agglutinating layer 190 may also be controlled byother process parameters. For example, an increased sputter rate duringformation of the agglutinating layer 190 may provide a larger grain sizethan slower sputtering processes. A larger grain size for theagglutinating layer 190 may reduce the sheet and contact resistance.

Following the deposition of the agglutinating layer 190, a plasmatreatment process may be performed. For example, the partially completeddevice 100 may be positioned in a process chamber, wherein an N₂+H₂plasma 195 (or other plasma composition) is generated. In oneembodiment, the plasma-treatment may occur during a preliminary or“heat-up” stage of processing a subsequently formed layer. Thus, theplasma-treatment process may be an in-situ process that is readilyinserted into existing fabrication procedures. The plasma-treatmentprocess may also be an ex-situ process, wherein the partially completeddevice 100 may be temporarily removed from a processing chamber orenvironment to perform the plasma-treatment process. In one embodiment,the plasma-treatment may employ a process gas mixture comprisingnitrogen or a nitrogen-containing composition (e.g., N₂) at a flow rateof about 200 sccm and/or hydrogen or a hydrogen-containing composition(e.g., H₃) at a flow rate of about 300 sccm. The plasma-treatment mayalso employ a process pressure of about 1.3 torr, a process temperatureof about 450° C., and/or an RF power of about 750 W. The process time ofthe plasma-treatment may range between about 5 seconds and about 90seconds, and may be dependent on the thickness of the agglutinatinglayer 190. For example, in one embodiment, the thickness of theagglutinating layer 190 may range between about 100 angstroms and about160 angstroms, and the process time may range between about 10 secondsand about 30 seconds.

Because the agglutinating layer 190 is the most recently formed layerprior to the plasma-treatment process, the plasma-treatment process hasthe greatest effect on the agglutinating layer 190, at least in thepresent embodiment. The plasma-treatment process may reduce the contactresistance R_(c) of the resulting vias 180 by at least about 25%.Moreover, as discussed above, the plasma-treatment process may beperformed in-situ and during a preliminary stage of subsequent layerformation, such that implementing a plasma-treatment process accordingto aspects of the present disclosure may be achieved with little or noimpact to manufacturing time or throughput.

In one embodiment, the plasma-treatment process may alter theagglutinating layer 190 by enlarging grain size and/or by implanting athin layer of one or more components of the treating plasma, such as N₂,into or onto the agglutinating layer 190 or other underlying layersexposed to the plasma-treatment. The increase in grain size may improvethe sheet resistance R_(s) and the contact resistance R_(c), and mayalso improve the quality of the interface between the second dielectriclayer 170, the agglutinating layer 190, and subsequently formed layers.In one embodiment, the grain size of the completed agglutinating layer190 may be increased by at least about 20% as a result of theplasma-treatment.

Referring to FIG. 2, illustrated is a sectional view of the device 100shown in FIG. 1 in a subsequent stage of manufacture. A barrier layer210 may be deposited over the agglutinating layer 190 after theplasma-treatment process is performed. The barrier layer may compriseTi, Ta, TiW, TiN, TaN, SiOC, SiC, and/or other materials, and may bedeposited by ALD, CVD, PVD, and/or other methods. In one embodiment, thebarrier layer 210 may be formed by MOCVD, which may utilize anorgano-metallic precursor such as TiCl₄, TDMAT, TDEAT, and/or othermaterials.

In one embodiment, the barrier layer 210 may be formed by a series ofin-situ processes, including a first deposition of TiN by MOCVD, anH₂+N₂ plasma densification process, and a second deposition of TiN byMOCVD. The plasma densification of the TiN deposited by MOCVD may atleast partially drive carbon from previously formed TiN layers. Thealternating plasma densification and MOCVD processes may be repeateduntil a desired thickness of the barrier layer 210 is achieved. Thistype of process may be employed when utilizing TDMAT or TDEAT as a Tiprecursor. In another embodiment, TiCl₄ is employed as a precursor, andanother plasma treatment may be employed, and/or a post anneal/plasmatreatment may be implemented.

As shown in FIG. 2, manufacture of the device 100 may continue byrepeating previously performed procedures to complete the device 100.For example, plugs 220 may be formed in the vias 180 over theplasma-treated agglutinating layer 190 and the barrier layer 210,wherein the plugs 220 may be similar in composition and manufacture tothe plugs 137 described above. A planarizing process may then beperformed to complete the vias 180. Conductive interconnects 230 maythen be formed over the completed vias 180, wherein the conductiveinterconnects 230 may be similar in composition and manufacture to theconductive interconnects 105 described above. Thus, the processesperformed to fabricate the agglutinating layer 190, including theplasma-treatment process, may be repeated as necessary to fabricateadditional agglutinating layers. Consequently, conductive interconnectsand vias having improved sheet resistance R_(s) and contact resistanceR_(c) may be fabricated at many levels of the interconnect structure,including and in addition to those illustrated in FIGS. 1 and 2,according to aspects of the present disclosure. For example, the vias130 formed in the dielectric layer 120 may be similar in composition andmanufacture to the vias 180 formed in the dielectric layer 170, and mayinclude a plasma-treated agglutinating layer.

Thus, the present disclosure introduces the concept of modifyingexisting contact fabrication procedures and structures thatconventionally include first and second barrier layers deposited beforea bulk conductive material of the contact. That is, in contrast to theconventional first and second barrier layers, an agglutinating layer isfirst deposited and plasma treated before a barrier layer and the bulkconductive material are deposited, according to aspects of the presentdisclosure. In one embodiment, the plasma-treated agglutinating layer,the barrier layer and the bulk conductive material may collectively forma contact having a sheet resistance R_(s) ranging between about 70 Ω/nm²and about 130 Ω/nm² and a contact resistance R_(c) ranging between about6 Ω/nm² and about 9 Ω/nm². However, other sheet resistance and contactresistance values are within the scope of the present disclosure.Moreover, sheet and contact resistance values that are as much as 25%less than with conventional processes and structures may be obtained byimplementing aspects of the present disclosure.

The scope of the present disclosure also includes a system formanufacturing a semiconductor device, such as the device 100 shown inFIGS. 1 and 2. Such a system may be at least similar to a depositioncluster system, such as an Endura platform distributed by AppliedMaterials, Inc., of Santa Clara, Calif.

Such a system may include two hexagonal or otherwise shaped carrierchambers, wherein substrates undergoing processing may be transported byrobotic arms. The system may include first and second load lock chambersfor loading substrates into the system. The load lock chambers may alsoserve as holding chambers between processes performed in other chambers,such as when a processing chamber is undergoing purging, preheating,etc.

The scope of the present disclosure also includes a system formanufacturing a semiconductor device, such as the device 100 shown inFIGS. 1 and 2. Such a system may be at least similar to a depositioncluster system, such as an Endura platform distributed by AppliedMaterials, Inc., of Santa Clara, Calif.

Such a system may include two hexagonal or otherwise shaped carrierchambers wherein substrates undergoing processing may be transported byrobotic arms. The system may include first and second load lock chambersfor loading substrates into the system. The load lock chambers may alsoserve as holding chambers between processes performed in other chambers,such as when a processing chamber is undergoing purging, preheating,etc.

The system may also include preparation chambers. The preparationchambers may be employed to orient substrates, such as for positioning asurface to be processed or precisely positioning alignment notches onthe substrates. The preparation chambers may also be employed as plasmacleaning reactors, wherein substrates may be processed prior to or aftera film deposition or etching process.

The remaining chambers in the system may be conventional orfuture-developed processing chambers, including those employed to formvarious insulating and metallization layers conventionally found insemiconductor devices. For example, one or more of the chambers may beemployed to perform IMP deposition of Ti, Ta, TaN, and/or othermaterials. As discussed above, IMP deposition is one process by whichthe agglutinating layer 190 shown in FIG. 1 may be formed. One or moreof the chambers may also be employed to perform MOCVD deposition of Ti,Ta, TaN, and/or other materials, including with the use of anorgano-metallic precursor. Furthermore, the plasma-treatment processdescribed above with respect to the agglutinating layer 190 shown inFIG. 1 may be performed in one or more of the chambers.

In some embodiments, if the plasma-treatment process includes an N2 +H2plasma at 450° C., and the agglutinating layer being plasma-treatedcomprises TiN deposited by MOCVD, minimum values can be observed for theaverage sheet resistance R_(s(ave)) and the sheet resistance uniformityR_(s) U % when the agglutinating layer 190 is plasma-treated immediatelyfollowing its deposition.

1. A method of manufacturing a semiconductor device contact, comprising:forming an insulating layer over a substrate; forming an agglutinatinglayer over the insulating layer; exposing the agglutinating layer to aplasma treatment employing a process chemistry comprising nitrogen andhydrogen; forming a barrier layer over the plasma-treated agglutinatinglayer; and forming a conductive layer over the barrier layer.
 2. Themethod recited in claim 1 wherein the agglutinating layer comprises amaterial selected from the group consisting of: Ti; Ta; TiW; TiN; TaN;SiOC; and SiC.
 3. The method recited in claim 1 wherein theagglutinating layer is formed by IMP deposition.
 4. The method recitedin claim 1 wherein the process chemistry comprises a nitrogen-containingcomposition at a flow rate of about 200 sccm and a hydrogen-containingcomposition at a flow rate of about 300 sccm.
 5. The method recited inclaim 1 wherein the plasma treatment employs a process temperature ofabout 450° C., an RF power of about 750 W, and a process time rangingbetween about 10 seconds and about 30 seconds.
 6. The method recited inclaim 1 wherein the agglutinating layer has a thickness ranging betweenabout 100 angstroms and about 160 angstroms.
 7. The method recited inclaim 1 wherein the barrier layer comprises a material selected from thegroup consisting of: Ti; Ta; TiW; TiN; TaN; SiOC; and SiC.
 8. The methodrecited in claim 1 wherein the barrier layer is formed by MOCVD.
 9. Themethod recited in claim 8 wherein the MOCVD utilizes an organo-metallicprecursor selected from the group consisting of: TiCl₄; TDMAT; andTDEAT.
 10. The method recited in claim 1 wherein the insulating layerincludes a recess and the agglutinating, barrier and conductive layersare formed at least partially within the recess.
 11. A method ofmanufacturing a semiconductor device, comprising: providing a substratehaving logic devices formed therein; forming an insulating layer overthe substrate and logic devices; forming a plurality of recesses in theinsulating layer each exposing a portion of one of the logic devicesforming an agglutinating layer over the insulating layer and at leastpartially within the plurality of recesses; exposing the agglutinatinglayer to a plasma treatment; forming a barrier layer over theplasma-treated agglutinating layer and at least partially within theplurality of recesses; and forming a bulk conductive layer over thebarrier layer to fill the plurality of recesses.
 12. The method recitedin claim 11 wherein the agglutinating layer comprises TiN and is formedby IMP deposition.
 13. The method recited in claim 11 wherein the plasmatreatment includes a process chemistry comprising nitrogen and hydrogen.14. The method recited in claim 13 wherein the process chemistrycomprises a nitrogen-containing composition at a flow rate of about 200sccm and a hydrogen-containing composition at a flow rate of about 300sccm.
 15. The method recited in claim 13 wherein the plasma treatmentemploys a process temperature of about 450° C., an RF power of about 750W, and a process time ranging between about 10 seconds and about 30seconds.
 16. The method recited in claim 11 wherein the agglutinatinglayer has a thickness ranging between about 100 angstroms and about 160angstroms.
 17. The method recited in claim 11 wherein the barrier layercomprises TiN and is formed by MOCVD.
 18. The method recited in claim 17wherein the MOCVD utilizes an organo-metallic precursor selected fromthe group consisting of: TiCl₄; TDMAT; and TDEAT.
 19. The method recitedin claim 17 wherein the barrier layer includes a plurality of plasmadensified TiN layers.
 20. The method recited in claim 11 wherein theagglutinating layer is exposed to the plasma treatment substantiallyimmediately after the agglutinating layer is formed.
 21. A method ofmanufacturing a semiconductor device, comprising: forming an insulatinglayer over a substrate; forming an agglutinating layer over theinsulating layer; exposing the agglutinating layer to a plasma treatmentimmediately after the agglutinating layer is formed; forming a barrierlayer over the plasma-treated agglutinating layer; and forming aconductive layer over the barrier layer.
 22. The method recited in claim22 wherein the agglutinating layer comprises TiN and is formed by IMPdeposition.
 23. The method recited in claim 21 wherein the plasmatreatment employs a process chemistry comprising a nitrogen-containingcomposition at a flow rate of about 200 sccm and a hydrogen-containingcomposition at a flow rate of about 300 sccm, a process temperature ofabout 450° C., an RF power of about 750 W, and a process time rangingbetween about 10 seconds and about 30 seconds, and wherein theagglutinating layer has a thickness ranging between about 100 angstromsand about 160 angstroms.
 24. The method recited in claim 21 wherein thebarrier layer comprises a plurality of plasma-densified layers, andwherein at least one of the plurality of plasma-densified layerscomprises TiN and is formed by MOCVD utilizing an organo-metallicprecursor selected from the group consisting of: TiCl₄; TDMAT; andTDEAT.
 25. The method recited in claim 21 wherein the insulating layerincludes a recess, and wherein the agglutinating, barrier and conductivelayers are formed at least partially within the recess.